Product Summary
The PC28F256P30T85 is an Intel StrataFlash Embedded Memory. Offered in 64-Mbit up through 1-Gbit densities, the PC28F256P30T85 brings reliable, two-bit-per-cell storage technology to the embedded flash market segment. Benefits include more density in less space, high-speed interface, lowest cost-per-bit NOR device, and support for code and data storage. Features include high-performance synchronous-burst read mode, fast asynchronous access times, low power, flexible security options, and three industry standard package choices. The PC28F256P30T85 is manufactured using Intel 130 nm ETOX VIII process technology.
Parametrics
PC28F256P30T85 absolute maximum ratings: (1)Temperature under bias:–40℃ to +85℃; (2)Storage temperature:–65℃ to +125℃; (3)Voltage on any signal (except VCC, VPP):–0.5V to +4.1V; (4)VPP voltage:–0.2V to +10V; (5)VCC voltage:–0.2V to +2.5V; (6)VCCQ voltage:–0.2V to +4.1V; (7)Output short circuit current:100 mA.
Features
PC28F256P30T85 features: (1)85/88 ns initial access; (2)40 MHz with zero wait states, 20 ns clock-to-data output synchronous-burst read mode; (3)25 ns asynchronous-page read mode; (4)4-, 8-, 16-, and continuous-word burst mode; (5)Buffered Enhanced Factory Programming (BEFP) at 5 μs/byte (Typ); (6)1.8 V buffered programming at 7 μs/byte (Typ); (7)20 μs (Typ) program suspend; (8)20 μs (Typ) erase suspend; (9)Intel Flash Data Integrator optimized; (10)Basic Command Set and Extended Command Set compatible; (11)Common Flash Interface capable; (12)VCC (core) voltage: 1.7 V to 2.0 V; (13)VCCQ (I/O) voltage: 1.7 V to 3.6 V; (14)Standby current: 55 μA (Typ) for 256-Mbit; (15)4-Word synchronous read current: 13 mA (Typ) at 40 MHz.
Diagrams
Image | Part No | Mfg | Description | ![]() |
Pricing (USD) |
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![]() PC28F256P30T85A |
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![]() IC FLASH 256MBIT 85NS 64EZBGA |
![]() Data Sheet |
![]() Negotiable |
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![]() PC28F256P30T85B |
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![]() IC FLASH 256MBIT 85NS 64EZBGA |
![]() Data Sheet |
![]() Negotiable |
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