Product Summary

The MRF373 is a RF Power Field Effect Transistor designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of the MRF373 makes it ideal for large–signal, common source amplifier applications in 28 volt transmitter equipment.

Parametrics

MRF373 maximum ratings: (1)Drain–Source Voltage VDSS: 65 Vdc; (2)Gate–Source Voltage VGS: ±20 Vdc; (3)Drain Current – Continuous ID: 7 Adc; (4)Storage Temperature Range Tstg: – 65 to +150 ℃; (5)Operating Junction Temperature TJ: 200 ℃.

Features

MRF373 features: (1)Guaranteed CW Performance at 860 MHz, 28 Volts, Narrowband Fixture; (2)Typical Performance at 860 MHz, 28 Volts, Broadband Push-Pull Fixture; (3)Excellent Thermal Stability; (4)100% Tested for Load Mismatch Stress at All Phase Angles with 5:1 VSWR @ 28 Vdc, 860 MHz, 60 Watts CW.

Diagrams

MRF373 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
MRF373ALR5
MRF373ALR5

Freescale Semiconductor

Transistors RF MOSFET Power 75W 860MHZ LDMOS NI360L

Data Sheet

Negotiable 
MRF373ALSR1
MRF373ALSR1

Freescale Semiconductor

Transistors RF MOSFET Power RF PWR LDMOS 75W NI360S

Data Sheet

Negotiable 
MRF373R1
MRF373R1

Other


Data Sheet

Negotiable 
MRF373ALSR5
MRF373ALSR5

Freescale Semiconductor

Transistors RF MOSFET Power 75W RF PWR LDMOS NI360LS

Data Sheet

Negotiable 
MRF373ALR1
MRF373ALR1

Freescale Semiconductor

Transistors RF MOSFET Power 75W 860MHZ LDMOS NI360L

Data Sheet

Negotiable