(China (Mainland))
Product Summary
The MRF373 is a RF Power Field Effect Transistor designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of the MRF373 makes it ideal for large–signal, common source amplifier applications in 28 volt transmitter equipment.
Parametrics
MRF373 maximum ratings: (1)Drain–Source Voltage VDSS: 65 Vdc; (2)Gate–Source Voltage VGS: ±20 Vdc; (3)Drain Current – Continuous ID: 7 Adc; (4)Storage Temperature Range Tstg: – 65 to +150 ℃; (5)Operating Junction Temperature TJ: 200 ℃.
Features
MRF373 features: (1)Guaranteed CW Performance at 860 MHz, 28 Volts, Narrowband Fixture; (2)Typical Performance at 860 MHz, 28 Volts, Broadband Push-Pull Fixture; (3)Excellent Thermal Stability; (4)100% Tested for Load Mismatch Stress at All Phase Angles with 5:1 VSWR @ 28 Vdc, 860 MHz, 60 Watts CW.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 MRF373ALR1 |
Freescale Semiconductor |
Transistors RF MOSFET Power 75W 860MHZ LDMOS NI360L |
Data Sheet |
Negotiable |
|
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|
MRF373ALR5 |
Freescale Semiconductor |
Transistors RF MOSFET Power 75W 860MHZ LDMOS NI360L |
Data Sheet |
Negotiable |
|
||||
|
MRF373ALSR1 |
Freescale Semiconductor |
Transistors RF MOSFET Power RF PWR LDMOS 75W NI360S |
Data Sheet |
Negotiable |
|
||||
|
MRF373ALSR5 |
Freescale Semiconductor |
Transistors RF MOSFET Power 75W RF PWR LDMOS NI360LS |
Data Sheet |
Negotiable |
|
||||
|
MRF373R1 |
Other |
|
Data Sheet |
Negotiable |
|
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