(China (Mainland))
Product Summary
The SI2319DS-T1-E3 is a P-Channel 40-V (D-S) MOSFET.
Parametrics
SI2319DS-T1-E3 absolute maximum ratings: (1)Drain-Source Voltage VDS: -40V; (2)Gate-Source Voltage VGS: ± 20V; (3)Continuous Drain Current (TJ = 150 ℃), TA = 25 ℃: -2.3V; TA = 70 ℃: -1.85V; (4)Pulsed Drain Current, IDM: -12A; (5)Continuous Source Current (Diode Conduction): -0.62 A; (8)Power Dissipation, TA = 25 ℃: PD: 1.25W; TA = 70 ℃: 0.8W; (9)Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 ℃.
Features
SI2319DS-T1-E3 features: (1)TrenchFET Power MOSFET; (2)Load Switch.
Diagrams
| Image | Part No | Mfg | Description |  |
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 SI2319DS-T1-E3 |
Vishay/Siliconix |
MOSFET 40V 3.0A 1.25W 82 mohms @ 10V |
Data Sheet |
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SI2300 |
Other |
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Data Sheet |
Negotiable |
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SI2300DS-T1-GE3 |
Vishay/Siliconix |
MOSFET 30V 3.6A N-CH MOSFET |
Data Sheet |
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SI2301 |
Micro Commercial Components (MCC) |
MOSFET -20V -2.8A |
Data Sheet |
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Si2301ADS |
Other |
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Data Sheet |
Negotiable |
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SI2301ADS-T1 |
Vishay/Siliconix |
MOSFET 20V 2.0A 0.9W |
Data Sheet |
Negotiable |
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SI2301ADS-T1-E3 |
Vishay/Siliconix |
MOSFET 20V 2.0A 0.9W |
Data Sheet |
Negotiable |
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