(China (Mainland))
Product Summary
The TE28F320J3C110 is an Intel StrataFlash Memory. The optimized architecture and interface of the TE28F320J3C110 dramatically increases read performance by supporting page-mode reads. This read mode is ideal for non-clock memory systems. The TE28F320J3C110 incorporates a Write Buffer of 32 bytes (16 words) to allow optimum programming performance.
Parametrics
TE28F320J3C110 absolute maximum ratings: (1)Temperature under Bias Extended: -40℃ to +85℃; (2)Storage Temperature: -65℃ to +125℃; (3)Voltage On Any signal: -2.0 V to +5.0 V; (4)Output Short Circuit Current: 100 mA.
Features
TE28F320J3C110 features: (1)110/115/120/150 ns Initial Access Speed; (2)125 ns Initial Access Speed (256 Mbit density only); (3)25 ns Asynchronous Page mode Reads; (4)30 ns Asynchronous Page mode Reads (256Mbit density only); (5)100K Minimum Erase Cycles per Block; (6)0.18 μm ETOX. VII Process (J3C); (7)0.25 μm ETOX. VI Process (J3A).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
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 TE28F320J3C110SL7H8 |
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IC FLASH 32MBIT 110NS 56TSOP |
Data Sheet |
Negotiable |
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TE28F004S3-150 |
Other |
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Data Sheet |
Negotiable |
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TE28F004S5-100 |
Other |
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Data Sheet |
Negotiable |
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TE28F004SC-100 |
Other |
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Data Sheet |
Negotiable |
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TE28F008B3B120 |
Other |
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Data Sheet |
Negotiable |
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TE28F008B3BA110 |
Other |
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Data Sheet |
Negotiable |
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TE28F008SA-100 |
Other |
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Data Sheet |
Negotiable |
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