(China (Mainland))
Product Summary
The RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.
Parametrics
RD30HVF1 absolute maximum ratings: (1)VDSS Drain to source voltage Vgs=0V: 30 V; (2)VGSS Gate to source voltage Vds=0V: +/-20 V; (3)Pch Channel dissipation Tc=25℃: 75 W; (4)Pin Input power Zg=Zl=50Ω: 2.5 W; (5)ID Drain current: 7 A; (6)Tch Channel temperature: 175 ℃; (7)Tstg Storage temperature: -40 to +175 ℃; (8)Rth j-c Thermal resistance junction to case: 2.0 ℃/W.
Features
RD30HVF1 features: (1)High power gain: Pout>30W, Gp>14.7dB @Vdd=12.5V,f=175MHz; (2)High Efficiency: 60%typ.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 RD30HVF1 |
Other |
|
Data Sheet |
Negotiable |
|
||||
| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
|
RD30ESAB |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
RD30ESAB1 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
RD30ESAB2 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
RD30ESAB3 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
RD30ESAB4 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
RD30FB |
Other |
|
Data Sheet |
Negotiable |
|
||||
