(China (Mainland))
Product Summary
The RD15HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applications.
Parametrics
RD15HVF1 absolute maximum ratings: (1)VDSS Drain to source voltage Vgs=0V: 30V; (2)VGSS Gate to source voltage Vds=0V: +/-20V; (3)Pch Channel dissipation Tc=25℃: 48W; (4)Pin Input power Zg=Zl=50Ω: 1.5(Note2)W; (5)ID Drain current: 4A; (6)Tch Channel temperature: 150℃; (7)Tstg Storage temperature: -40 to +150℃; (8)Rth j-c Thermal resistance junction to case: 2.6℃/W.
Features
RD15HVF1 features: (1)High power and High Gain: Pout>15W, Gp>14dB @Vdd=12.5V,f=175MHz; Pout>15W, Gp>7dB @Vdd=12.5V,f=520MHz; (2)High Efficiency: 60%typ. on VHF Band; (3)High Efficiency: 55%typ. on UHF Band.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 RD15HVF1 |
Other |
|
Data Sheet |
Negotiable |
|
||||||
| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||
|
RD15131121 |
|
SWITCH ROCKER SPST 10A 125V |
Data Sheet |
|
|
||||||
|
RD15ESAB |
Other |
|
Data Sheet |
Negotiable |
|
||||||
|
RD15ESAB1 |
Other |
|
Data Sheet |
Negotiable |
|
||||||
|
RD15ESAB2 |
Other |
|
Data Sheet |
Negotiable |
|
||||||
|
RD15ESAB3 |
Other |
|
Data Sheet |
Negotiable |
|
||||||
|
RD15FB |
Other |
|
Data Sheet |
Negotiable |
|
||||||
