IRFL4105TRPBF

MOSFET, Surface Mount, 55V, 3.7A, SOT223, International Rectifier, Advanced Process Technology

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Price:: US $0.10~0.20 / piece [Get Latest Price]

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PartNumber:: IRFL4105TRPBF

Brand:: International Rectifier - IR | Pack: DIP | D/C: 11+

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Products Upload time: 2011-12-07

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Product Summary

The IRFL4105TRPBF is a Fifth Generation HEXFET from International Rectifier utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. IRFL4105TRPBF unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application.

Parametrics

IRFL4105TRPBF absolute maximum ratings: (1)ID @ TA = 25℃ Continuous Drain Current, VGS @ 10V: 5.2A; (2)ID @ TA = 25℃ Continuous Drain Current, VGS @ 10V: 3.7A; (3)ID @ TA = 70℃ Continuous Drain Current, VGS @ 10V: 3.0A; (4)IDM Pulsed Drain Current: 30A; (5)PD @TA = 25℃ Power Dissipation (PCB Mount): 2.1 W; (6)PD @TA = 25℃ Power Dissipation (PCB Mount): 1.0 W; (7)Linear Derating Factor (PCB Mount): 8.3 mW/℃; (8)VGS Gate-to-Source Voltage: ± 20 V; (9)EAS Single Pulse Avalanche Energy: 110 mJ; (10)IAR Avalanche Current: 3.7 A; (11)EAR Repetitive Avalanche Energy: 0.10 mJ; (12)dv/dt Peak Diode Recovery dv/dt: 5.0 V/ns; (13)TJ, TSTG Junction and Storage Temperature Range: -55 to + 150 ℃.

Features

IRFL4105TRPBF features: (1)Surface Mount; (2)Advanced Process Technology; (3)Ultra Low On-Resistance; (4)Dynamic dv/dt Rating; (5)Fast Switching; (6)Fully Avalanche Rated; (7)Lead-Free.