MRF6VP2600HR5

RF Power Field Effect Transistor, 50V, Greater Negative Gate, Integrated ESD Protection

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Price:: US $100.00~150.00 / piece [Get Latest Price]

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	US $100.00~150.00

PartNumber:: MRF6VP2600HR5

Brand:: Freescale Semiconductor, Inc - Freescale | Pack: DIP | D/C: 11+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2011-12-07

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Part Number:MRF6VP2600HR5
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Product Summary

The MRF6VP2600HR5 is a RF Power Field Effect Transistor. It is designed primarily for wideband applications with frequencies up to 500 MHz. The MRF6VP2600HR5 is unmatched and is suitable for use in broadcast applications.

Parametrics

MRF6VP2600HR5 absolute maximum ratings: (1)Drain--Source Voltage VDSS:-0.5, +110 Vdc; (2)Gate--Source Voltage VGS:-6.0, +10 Vdc; (3)Storage Temperature Range Tstg:- 65 to +150℃; (4)Case Operating Temperature TC:150℃; (5)Operating Junction Temperature: 225℃.

Features

MRF6VP2600HR5 features: (1)Characterized with Series Equivalent Large--Signal Impedance Parameters; (2)CW Operation Capability with Adequate Cooling; (3)Qualified Up to a Maximum of 50 VDD Operation; (4)Integrated ESD Protection; (5)Designed for Push--Pull Operation; (6)Greater Negative Gate--Source Voltage Range for Improved Class C Operation; (7)RoHS Compliant; (8)In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.