Product Summary
The MBRS3100T3G schottky power rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. The MBRS3100T3G is Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system.
Parametrics
MBRS3100T3G maximum ratings: (1)Peak Repetitive Reverse Voltage, VRRM: 100 V; (2)Working Peak Reverse Voltage, VRWM: 100 V; (3)DC Blocking Voltage, VR: 100 V; (4)Average Rectified Forward Current(At Rated VR, TL = 100℃), IF(AV): 3.0 A; (5)Nonrepetitive Peak Surge Current(Surge applied at rated load conditions halfwave, single phase, 60 Hz), IFSM: 130 A; (6)Operating Junction Temperature Range, TJ: -65 to +175 ℃.
Features
MBRS3100T3G features: (1)Small Compact Surface Mountable Package with J-Bend Leads; (2)Rectangular Package for Automated Handling; (3)Highly Stable Oxide Passivated Junction; (4)Excellent Ability to Withstand Reverse Avalanche Energy Transients; (5)Guard-Ring for Stress Protection; (6)This is a Pb-Free Device.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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MBRS3100T3G |
ON Semiconductor |
Schottky (Diodes & Rectifiers) 3A 100V |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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Taiwan Semiconductor |
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Schottky (Diodes & Rectifiers) 10 Amp 50 Volt Dual |
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Schottky (Diodes & Rectifiers) 10 Amp 60 Volt Single |
Data Sheet |
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Schottky (Diodes & Rectifiers) 10 Amp 60 Volt Dual |
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Taiwan Semiconductor |
Schottky (Diodes & Rectifiers) 10 Amp 100 Volt Dual |
Data Sheet |
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