(China (Mainland))
Product Summary
The MRF6VP11KHR5 is a RF Power Field Effect Transistor designed primarily for pulsed wideband applications with frequencies up to 150 MHz. Device is unmatched and is suitable for use in industrial, medical and scientific applications.
Parametrics
MRF6VP11KHR5 absolute maximum ratings: (1)Drain-Source Voltage, VDSS: -0.5, +110 Vdc; (2)Gate-Source Voltage, VGS: -6.0, +10 Vdc; (3)Storage Temperature Range, Tstg: - 65 to +150℃; (4)Case Operating Temperature, TC: 150℃; (5)Operating Junction Temperature, TJ: 225℃.
Features
MRF6VP11KHR5 features: (1)Characterized with Series Equivalent Large--Signal Impedance Parameters; (2)CW Operation Capability with Adequate Cooling; (3)Qualified Up to a Maximum of 50 VDD Operation; (4)Integrated ESD Protection; (5)Designed for Push--Pull Operation; (6)Greater Negative Gate--Source Voltage Range for Improved Class C Operation; (7)RoHS Compliant; (8)In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
Diagrams
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 MRF6VP11KHR5 |
Freescale Semiconductor |
Transistors RF MOSFET Power VHV6 130MHZ 1000W NI1230 |
Data Sheet |
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