Product Summary
The 2N7002 is an N-channel enhancement mode vertical D-MOS transistor in a SOT23 envelope. The 2N7002 is designed for use as a Surface Mounted Device (SMD) in thin and thick-film circuits, with applications in relay, high-speed and line transformer drivers.
Parametrics
2N7002 limiting values: (1)drain-source voltage: 60 V; (2)gate-source voltage open drain: 40 V; (3)drain current DC value: 180 mA; (4)drain current peak value: 800 mA; (5)storage temperature range: -65 to 150℃; (6)junction temperature: 150℃.
Features
2N7002 features: (1)Direct interface to C-MOS, TTL, etc.; (2)High-speed switching; (3)No secondary breakdown.
Diagrams
Image | Part No | Mfg | Description | ![]() |
Pricing (USD) |
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![]() 2N7002 T&R 3000 PCS |
![]() Central Semiconductor |
![]() MOSFET N-Ch 5V .2A |
![]() Data Sheet |
![]() Negotiable |
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![]() |
![]() 2N7002(Z) |
![]() Other |
![]() |
![]() Data Sheet |
![]() Negotiable |
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![]() |
![]() 2N7002,215 |
![]() NXP Semiconductors |
![]() MOSFET N-CH TRNCH 60V 300MA |
![]() Data Sheet |
![]()
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![]() |
![]() 2N7002\E9 |
![]() Vishay Semiconductors |
![]() MOSFET SOT-23 N-CH 60V 0.25 |
![]() Data Sheet |
![]() Negotiable |
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![]() |
![]() 2N7002_D87Z |
![]() Fairchild Semiconductor |
![]() MOSFET N-Ch Enhancement Mode Field Effect |
![]() Data Sheet |
![]()
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![]() |
![]() 2N7002_Q |
![]() Fairchild Semiconductor |
![]() MOSFET N-CHANNEL 60V 115mA |
![]() Data Sheet |
![]() Negotiable |
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![]() |
![]() 2N7002_S00Z |
![]() Fairchild Semiconductor |
![]() MOSFET |
![]() Data Sheet |
![]() Negotiable |
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![]() |
![]() 2N7002-7 |
![]() Diodes Inc. |
![]() MOSFET 60V 200mW |
![]() Data Sheet |
![]() Negotiable |
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